Process for preparing low-dielectric-constant silica film
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Oct 2, 2003
app pub date -
Mar 26, 2002
filing date -
Mar 26, 2002
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A process for preparing low-dielectric-constant silica film is developed. The dielectric constant of said film are lower than 2.5. Said process comprises a) preparing spin coating solution, said solution being composed of silica precursor, deionized water, alcohol, single proton acid, and polyoxyethylene (20) sorbitan compounds also known as Tween group compounds as templates; the weight ratio of polyoxyethylene (20) sorbitan compounds over TEOS being more than 0.41; b) spin-coating the said solution into a film; c) removing most water and alcohol in said film and making the film react with silicon wafer in soft-bake process; d) removing said polyoxyethylene (20) sorbitan compound of said film in calcination process; and e) Modifying said film to hydrophobic by dehydroxylating said film.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully