High selective ratio and high and uniform plasma processing method and system
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United States of America Patent
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Issued Date -
Oct 2, 2003
app pub date -
Mar 21, 2003
filing date -
Mar 26, 2002
priority date (Note) -
Abandoned
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Abstract
A plasma processing method and a plasma processing system provide advantages of a high degree of selectivity, a large area processing capability and an enhanced precision level. A plasma processing method according to the invention is so designed that a pulse modulation power is supplied alternately to the plasma generating power supply and the substrate bias power supply by referring to the time taken by gas to diffuse from the center of electric discharge to the substrate. In a plasma processing system according to the invention, the plasma generating power supply and the substrate bias power supply are provided with modulation means for supplying a pulse modulation power alternately to the plasma generating section and the substrate electrode by referring to the time taken by gas to diffuse from the center of electric discharge to the substrate.
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