Dual sided power amplifier
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United States of America Patent
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Issued Date -
Sep 25, 2003
app pub date -
Mar 21, 2002
filing date -
Mar 21, 2002
priority date (Note) -
Abandoned
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Abstract
The invention features an improved semiconductor device comprising both active and passive devices and a method of manufacturing such semiconductor devices. A method in accord with the invention includes performing front side processing on a front side of the substrate to form an active semiconductor device on the front side of the substrate and performing back side processing on the back side of the substrate. The back side processing includes forming a via through the back side of the substrate to an electrically conductive layer formed on the front side of the substrate and forming a conductive layer in the via to form an electrically conductive path from the back side of the substrate to the electrically conductive layer formed on the front side of the substrate. The backside processing also includes forming a passive semiconductor device on the back side of the substrate and forming an electrical connection between the passive semiconductor device, the via, and the electrically conductive layer formed on the front side of the substrate.
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