Manufacturing apparatus of an insulation film
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United States of America Patent
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Issued Date -
Sep 11, 2003
app pub date -
Jan 30, 2003
filing date -
Jan 31, 2002
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
The invention provides apparatus for forming an insulating film which is able to reduce the decrease in the light amount due to the light transmittable window, to process the large scale base plate, and to improve the oxidation speed. In apparatus for forming an insulating film on a semiconductor surface by oxidizing the surface of the semiconductor as a substrate 6 by means of oxygen atom active species generated when irradiating a N.sub.2+O.sub.2 mixed gas 10 including at least oxygen with the light emitted from a xenon excimer lamp 1, wherein there are provided a gas intake port 8 and a gas exhaust port 9, by both of which the pressure of the atmosphere in the light source portion 2 sealed with a nitrogen gas 3 absorbing no light from the xenon excimer lamp 1 at an atmospheric pressure is kept approximately equal to the pressure of the N.sub.2+O.sub.2 mixed gas 10 surrounding the surface portion of the substrate 6.
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