Semiconductor device and method for fabricating the same
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United States of America Patent
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app pub date -
Feb 24, 2003
filing date -
Apr 3, 2000
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Abstract
After an insulating film serving as a gate insulating film is formed on a semiconductor substrate, a titanium nitride film is deposited by chemical vapor deposition on the insulating film. Then, a tungsten film is deposited by sputtering on the titanium nitride film. Subsequently, a multilayer film composed of the tungsten film and the titanium nitride film is patterned to form a gate electrode composed of the multilayer film.
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