Gas compositions for cleaning the interiors of reactors as well as for etching films of silicon- containing compounds
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United States of America Patent
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Issued Date -
Jul 31, 2003
app pub date -
Dec 27, 2002
filing date -
Sep 25, 2000
priority date (Note) -
Abandoned
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Abstract
This invention relates to gas compositions comprising fluorine-containing nitrogen compounds, which compositions are useful for cleaning the interior of reactors, such as those of CVD (chemical vapor deposition) equipment and also for etching films of silicon-containing compounds. Advantageously, the gas compositions are environmentally friendly and have little or no tendency to generate an effluent gas stream containing noxious ingredients, such as CF.sub.4, NF.sub.3 and the like. There are provided: a gas composition for cleaning the interior of film deposition chambers contaminated with silicic deposition, which comprises F.sub.3NO or combinations of F.sub.3NO with O.sub.2 and/or inert gas(es) or which comprises FNO or a combination of FNO with O.sub.2 and/or inert gas(es); and also a similar gas composition for etching films of silicon-containing compounds, e.g. films of semiconductive materials.
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