Diode
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United States of America Patent
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N/A
Issued Date -
Jul 31, 2003
app pub date -
Jan 28, 2002
filing date -
Jan 28, 2002
priority date (Note) -
Abandoned
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Abstract
A diode of the present invention has a Si substrate, a Si film of a first conductivity type laminated on this Si substrate, and a SiGe film of a second conductivity type laminated on this first conductivity type Si film.
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