Integrated capacitive device with hydrogen degradable dielectric layer protected by getter layer
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United States of America Patent
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Jul 13, 2004
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N/A
app pub date -
Jan 27, 2003
filing date -
Jul 28, 2000
priority date (Note) -
Expired
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Abstract
An integrated capacitive device has a thin-film capacitor formed of first and second electrode layers, electrically separated by a dielectric layer formed of a hydrogen-degradable compound. To protect the dielectric layer from degradation due to hydrogen diffusion, at least one layer of a getter material is provided, selected from alloys of zirconium, vanadium and iron, optionally containing minor quantities of manganese and/or a rare earth group element, and alloys of zirconium with at least one metal of the group of iron, cobalt and nickel, optionally containing up to about 15% by weight of elements of the rare earth group.
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