High fill factor CMOS image sensor
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United States of America Patent
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Issued Date -
Jun 12, 2003
app pub date -
Feb 6, 2002
filing date -
Dec 7, 2001
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Abandoned
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Abstract
A CMOS image sensor structure for improving the fill factor due to design rule limitations of a conventional image sensor that incorporates a photo diode and three N-type transistors. In a first embodiment, two N-type transistors are changed to P-type transistors and the P-type transistors are formed directly within the N-well of the photo diode. In a second embodiment, the other reset N-type transistor is changed to a reset diode and the reset diode is also formed directly within the N-well of the photo diode. In a third embodiment, the reset diode and the source follower transistor are implemented using a single transistor. In addition, the output selection transistors inside all three types of CMOS image sensor structures may be deleted to increase the fill factor even further.
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