System and method for improved thin dielectric films
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United States of America Patent
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Issued Date -
Jun 5, 2003
app pub date -
Mar 25, 2002
filing date -
Nov 16, 2001
priority date (Note) -
Abandoned
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Abstract
A method of depositing dielectric films such as silicon nitride, oxide, oxynitride, and multilayer films on the surface of a substrate is provided. The method comprises providing a substrate in a hot-wall rapid thermal processing chamber, and using a silicon precursor to form a dielectric film on the substrate.
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