Bipolar transistor circuit and usage method of bipolar transistor
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United States of America Patent
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Issued Date -
May 15, 2003
app pub date -
Sep 25, 2002
filing date -
Sep 8, 2000
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
Each of an emitter (E), a first collector (CH) and a second collector (CL) is formed from a first conductivity-type area. A breakdown voltage between the first collector (CH) and the base (B) is greater than a breakdown voltage between the second collector (CL) and the base (B). The base (B) is formed from a second conductivity-type area. A positive electrode of a direct-current power source is connected to the first collector (CH) through a load, a negative electrode thereof is connected to the emitter (E), and a control voltage is applied to the base (B). At this time, if the control voltage is equal to or greater than a value determined based on a current flowing between the second collector (CL) and the base (B), a current flows to the load. If the first collector (CH) and the second collector (CL) are connected with each other through a feedback circuit network (RF), and if the positive electrode of the direct-current power source is connected to the first collector (CH) through a resistor, a current which is a signal supplied to the base and amplified (B) flows to this resistor.
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