Etching of thin damage sensitive layers using high frequency pulsed plasma
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United States of America Patent
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Issued Date -
Apr 24, 2003
app pub date -
Oct 22, 2002
filing date -
Oct 22, 2001
priority date (Note) -
Abandoned
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Abstract
Disclosed is a system for etching thin damage sensitive layers with a plasma. The invention finds particular application for etching damage sensitive thin films such as Gallium Arsenide on Aluminum Gallium Arsenide. Damage to sensitive thin films is avoided by lowering the DC bias of the cathode. The low DC bias is achieved by increasing the frequency of the power source producing the plasma. A reduced etch rate, suitable for etching thin layers, is achieved by pulsing the RF power source between a high power and a low power at a selected duty cycle.
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