Importance

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Abstract

The present invention provides a plasma enhanced chemical vapor deposition apparatus wherein a grid is positioned between a gas supply section serving as an upper electrode and a substrate holder serving as a lower electrode, to change an electric field in a process chamber and increase a relative number of reactive fine particles. By applying a voltage to the grid, a structural characteristic of a material growing on the substrate can be adjusted, and by employing a position adjustment section for adjusting a position and an inclination of the grid, properties of the growing material, such as vertical orientation, a length, an orientation angle, etc., can be adjusted. The present invention also provides a method of producing a carbon nanotube using the plasma enhanced chemical vapor deposition apparatus. According to the method, it is possible to grow the carbon nanotube at a low temperature of about 300-550.degree. C., preferably 350-550.degree. C. Also, by adding the step of applying a voltage to the grid, a diameter, a length and an orientation angle of the carbon nanotube can be optimally adjusted. Further, by adjusting a position and an inclination of the grid, influence of the voltage applied to the grid and an orientation angle can be adjusted.

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First Claim