High flux light emitting diode having flip-chip type light emitting diode chip with a transparent substrate
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United States of America Patent
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Issued Date -
Mar 27, 2003
app pub date -
Sep 27, 2001
filing date -
Sep 27, 2001
priority date (Note) -
Abandoned
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Abstract
A high flux light emitting diode comprises a base substrate, a flip-chip type light emitting diode chip with a transparent substrate, and a cover substrate. The cover substrate has a center hole with a slanted reflective sidewall. The light emitting diode chip is disposed within the center hole. The base substrate is divided by a middle insulation region into two parts that connect the two electrodes of the light emitting diode chip. Highly thermally and electrically conductive material is used to form the base substrate for conducting a high current and dissipating heat efficiently. A transparent resin or epoxy is used to cover the enter hole and seal the diode chip. High intensity light can be emitted because the light is transmitted directly, reflected by a reflective electrode of the diode chip, or redirected by the reflective sidewall to exit the center hole of the cover substrate.
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