Synthesis of YBa2CU3O7 using sub-atmospheric processing
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United States of America Patent
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Sep 21, 2004
Grant Date -
Mar 13, 2003
app pub date -
Sep 12, 2001
filing date -
Sep 12, 2001
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Abstract
The present invention is a method of forming thick films of crystalline YBa.sub.2 Cu.sub.3 O.sub.7 that includes forming a precursor film comprising barium fluoride (BaF.sub.2), yttrium (Y) and copper (Cu). The precursor film is heat-treated at a temperature above 500.degree. C. in the presence of oxygen, nitrogen and water vapor at sub-atmospheric pressure to form a crystalline structure. The crystalline structure is then annealed at about 500.degree. C. in the presence of oxygen to form the crystalline YBa.sub.2 Cu.sub.3 O.sub.7 film. The YBa.sub.2 Cu.sub.3 O.sub.7 film formed by this method has a resistivity of from about 100 to about 600 .mu.Ohm-cm at room temperature and a critical current density measured at 77 K in a magnetic field of 1 Tesla of about 1.0.times.10.sup.5 Ampere per square centimeter (0.1 MA/cm.sup.2) or greater.
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