Optoelectronic device doped to augment an optical power threshold for bandwidth collapse and a method of manufacture therefor
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United States of America Patent
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Issued Date -
Mar 13, 2003
app pub date -
Sep 13, 2001
filing date -
Sep 13, 2001
priority date (Note) -
Abandoned
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Abstract
The present invention provides an improved optoelectronic device and a method of manufacture therefor. The optoelectronic device includes a doped buffer layer located over a substrate having an optical window formed therein and an absorber layer located over the doped buffer layer. The optoelectronic device further includes a doped region located over the absorber layer and having a dopant tail that extends substantially through the absorber layer, and the doped buffer layer and the dopant tail are doped to augment an optical power threshold for bandwidth collapse of the optoelectronic device.
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