Method and apparatus for monitoring changes in the surface of a workpiece during processing
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United States of America Patent
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N/A
Issued Date -
Mar 6, 2003
app pub date -
Aug 31, 2001
filing date -
Aug 31, 2001
priority date (Note) -
Abandoned
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Abstract
An apparatus for monitoring changes in the surface of a wafer during processing of the wafer is provided. The apparatus includes an optical transmission assembly configured to transmit to an area of the wafer a number of first discrete bands of transmitted light. Each of said number of first discrete bands of transmitted light has an effective wavelength. The apparatus also includes an optical detection assembly configured to receive a number of discrete bands of reflected light reflected from the area of the wafer. The optical detection assembly is further configured to detect a reflected intensity of each of the number of discrete bands of reflected light. An analyzer is configured to receive from the optical detection assembly the reflected intensity of each of the number of discrete bands of reflected light and is configured to detect changes in the surface of the wafer during processing from the reflected intensity.
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