Method for forming large integration and ultra-fine lines on a substrate
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United States of America Patent
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Issued Date -
Feb 13, 2003
app pub date -
Aug 13, 2001
filing date -
Aug 13, 2001
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method for forming ultra-fine width lines on a substrate avoids occurrence of overetch/underetch defects in the many etching steps, as solder layer or copper film etching steps. With the present method the line shape is able to be achieved close to an ideal shape, so that the quality of the lines is high and the integration of the substrate is also high.
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