Silicon single crystal wafer fabricating method and silicon single crystal wafer
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United States of America Patent
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Issued Date -
Feb 13, 2003
app pub date -
Aug 5, 2002
filing date -
Aug 8, 2001
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
At the time of fabricating a silicon single crystal wafer from a nitrogen-doped silicon single crystal grown according to the Czochralski method, a silicon single crystal wafer covered with a region in which an oxygen precipitation bulk micro defect and an oxidation induced stacking fault mixedly exist is subjected to heat treatment at a temperature of 1100 to 1300.degree. C. in a reducing gas or inert gas atmosphere. In such a manner, a method of fabricating a high-quality silicon single crystal wafer and a silicon single crystal wafer in which no grown-in crystal defects exist in the whole surface and oxygen precipitation bulk micro defects (BMD) are formed at a sufficiently high density to display the IG effect on the inner side can be provided. The single crystal wafer can be suitably used to form an operation region of a semiconductor device.
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