Methods of sputtering using krypton
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United States of America Patent
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Issued Date -
Feb 6, 2003
app pub date -
Aug 21, 2002
filing date -
Jan 4, 2001
priority date (Note) -
Abandoned
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Abstract
A method of sputtering a layer from a target having a plurality of recesses or openings includes using Krypton as a sputtering gas and is characterized in that the gas flow is less than 20 sccm and or the Krypton pressure is less than 1 militor.
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