Wet and dry etching process on <110> silicon and resulting structures

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United States of America Patent

APP PUB NO 20020195417A1
SERIAL NO

10124612

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Abstract

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A method of producing smooth sidewalls on a micromachined device is described. A portion of the wafer is dry etched, forming a dry etched sidewall. The sidewall is covered with a mask. An area adjacent to the dry etched area is wet etched, forming a wet etched sidewall. The mask may optionally be removed after wet etching. The wafer substrate has a <110> orientation, which allows the wet etched area to have nearly vertical wet etched sidewalls.

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Patent Owner(s)

Patent OwnerAddress
NUVOTRONICS LLC7586 PEPPERS FERRY LOOP RADFORD VA 24141

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Steinberg, Dan A Blacksburg, VA 70 829

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