Wet and dry etching process on <110> silicon and resulting structures
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United States of America Patent
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Issued Date -
Dec 26, 2002
app pub date -
Apr 17, 2002
filing date -
Apr 20, 2001
priority date (Note) -
Abandoned
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Abstract
A method of producing smooth sidewalls on a micromachined device is described. A portion of the wafer is dry etched, forming a dry etched sidewall. The sidewall is covered with a mask. An area adjacent to the dry etched area is wet etched, forming a wet etched sidewall. The mask may optionally be removed after wet etching. The wafer substrate has a <110> orientation, which allows the wet etched area to have nearly vertical wet etched sidewalls.
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