Semiconductor lasers with improved coupling efficiency
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United States of America Patent
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Issued Date -
Dec 19, 2002
app pub date -
Jun 15, 2001
filing date -
Jun 15, 2001
priority date (Note) -
Abandoned
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Abstract
The invention is a semiconductor laser, laser module, and method of manufacture. The laser includes an active region having a first refractive index, and at least one confinement layer with a second refractive index, which is lower than the first refractive index. An anti-guiding layer having a third refractive index which is lower than the second refractive index is positioned so that the confinement layer is between the active region and the anti-guiding layer. A cladding layer having a fourth refractive index which is greater than the third refractive index is positioned so that the anti-guiding layer is between the cladding layer and the confinement layer.
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