MOS field effect transistor structure and method of manufacture
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United States of America Patent
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app pub date -
Feb 26, 2002
filing date -
May 29, 2001
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Abandoned
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Abstract
A method of manufacturing a metal-oxide-semiconductor field effect (MOSFET) device. A substrate having an isolating structure thereon is provided. A gate dielectric layer and a conductive layer are sequentially formed over the substrate. The conductive layer and the gate dielectric layer are patterned to form a gate structure. A low dielectric constant material spacer is formed on the sidewall of the gate structure. A source drain region is formed in the substrate on each side of the gate structure.
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