Method for single crystal growth of perovskite oxides
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United States of America Patent
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Issued Date -
Dec 5, 2002
app pub date -
Jun 11, 2001
filing date -
Feb 23, 2000
priority date (Note) -
Abandoned
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Abstract
The invention relates to a method for growing single crystals of Perovskite Oxides. The method is characterized by comprising the steps of (a) contacting a Perovskite seed single with a Perovskite polycrystal and (b) heating the contacted crystals to grow the same structure as the single crystal into the polycrystal, the heating is controlled under conditions which abnormal grains growth is induced in the contacted portion while repressed in the inside of the polycrystal. The method for growing single crystals of Perovskite Oxides according to this invention has an advantage to provide an effective low cost in manufacturing process for single crystals by using usual heat-treatment process without special equipments. The method for growing single crystals of Perovskite Oxides according to this invention can be also applicable to other material systems showing abnormal grain growth behavior.
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