Chemical vapor deposition growth of single-wall carbon nanotubes
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Nov 21, 2002
app pub date -
Apr 5, 2001
filing date -
Apr 5, 2001
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
The invention relates to a chemical vapor deposition ('CVD') process for the growth of single-wall carbon nanotube ('SWNT'). According to the invention, methane gas is decomposed in the presence of a supported iron-containing catalyst to grow SWNT material within a growth temperature range from about 670.degree. C. to about 800.degree. C. The process provides higher yields of SWNT material and reduces the formation of amorphous carbon. Thus, the SWNT material produced according to the invention will minimize problems associated with purification steps, such as breakage or damage to the SWNT material. The invention provides for the manufacture of SWNT material at lower temperatures, which not only results in lower equipment and processing costs, but also provides compatibility with substrates that cannot be used at higher temperatures. The invention may be used to provide an inexpensive process for the mass production of SWNT material.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully