TEM modes of nanowire arrays for use in photolithography
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United States of America Patent
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Issued Date -
Nov 21, 2002
app pub date -
Mar 28, 2001
filing date -
Mar 28, 2001
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Abandoned
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Abstract
A nanowire array supports axially-propagating TEM modes. The resolution of the array is determined by the interwire spacing rather than by the optical wavelength. The resolution can be made smaller than the optical wavelength. A bipartite honeycomb configuration is the preferred structure to support the TEM modes. Each nearest neighbor wire pair in the array (from opposite classes in a bipartite nanowire array) can be viewed as a two-wire transmission line, embedded in the surrounding matrix. Selective pairs of nanowires can be activated with wire loops, in a manner similar to that used to couple light to coaxes. The pattern of the wire loops determines where the array is excited; hence where light is transmitted. In effect, loop positioning provides a method of 'writing' a desired transmission pattern into a pristine array in a similar manner as lithography.
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