Chemical vapor deposition apparatus and chemical vapor deposition method
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United States of America Patent
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Dec 23, 2003
Grant Date -
Oct 31, 2002
app pub date -
Feb 22, 2002
filing date -
Feb 28, 2001
priority date (Note) -
Expired
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Abstract
The present invention provides a chemical vapor deposition apparatus for a semiconductor film, containing a horizontal tubular reactor, a susceptor, a heater, a feed gas introduction portion and a reaction gas exhaust portion, where part of the tubular reactor walls inclines downward from the upstream side of the feed gas passageway towards the downstream side thereof. The present invention also provides a chemical vapor deposition method using the apparatus.
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