Thermal control of image pattern distortions
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United States of America Patent
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N/A
Issued Date -
Oct 17, 2002
app pub date -
Mar 14, 2002
filing date -
Mar 19, 2001
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
In a masked lithography system (100) a mask (102) with a mask pattern is imaged onto a target (104) by means of a lithography beam (101, 103). For controlling image pattern distortions, a plurality of metrology structures are provided in the mask and are imaged onto a metrology means (150). There, the positions of images of the metrology structures are measured; these positions are compared with respective nominal positions, and a plurality of radiation intensities, each associated to a respective location on the mask, are calculated in a control unit (200). The locations on the mask are heated with the respective radiation intensities by means of a radiation projector means with a radiation source (300) positioned outside the lithography beam path; the heating of the mask thus effected generates distortions in the mask pattern due to local thermal expansion. The distortion control procedure may be iterated in a feedback loop.
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