Method and structure for ex-situ polymer stud grid array contact formation
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United States of America Patent
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N/A
Issued Date -
Oct 3, 2002
app pub date -
Mar 29, 2002
filing date -
Mar 30, 2001
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method and structure of ex-situ polymer stud grid array (ESWS-PSGA) contact formation on a semiconductor wafer having individual integrated circuit (IC) device areas. A large area of a polymer stud grid array (PSGA) field, including a polymer film, is pre-fabricated and then interconnected with the semiconductor wafer, and the ESWS-PSGA is formed using methods including laser structuring, compression molding, photolithographic-plasma etching, photolithographic processing, or adding material to the surface of the polymer film. The ESWS-PSGA has the PSGA field extend across the entire active surface of the semiconductor wafer, with metallized PSGA input/output (I/O) studs being disposed across the individual IC device areas. Alternatively, the ESWS-PSGA can be formed by spreading an extension of the polymer film beyond the perimeter of the semiconductor wafer, with metallized PSGA input/output (I/O) studs being disposed across the individual IC device areas. The extension provides temporary connection to an integrated circuit tester and/or an integrated circuit burn-in system, and may have studs for connecting to the tester.
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