Method of reworking bump
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United States of America Patent
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N/A
Issued Date -
Sep 26, 2002
app pub date -
May 11, 2001
filing date -
Mar 22, 2001
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method of reworking a bump is provided. Failed bumps are chemically etched off the wafer. During etching, the etchant somewhat damages the passivation layer on the wafer. Therefore, a global metal layer is needed to cover the bonding pads and the passivation layer before a new under ball metallurgy (UBM) layer is formed. A complementary passivation layer is formed to cover the damaged passivation layer after the failed bumps are removed. Then, a new UBM layer and new bumps are formed. Alternatively, the failed bumps and UBM layer are chemically etched off without formation of a metal layer. Instead, a complementary passivation layer is formed to cover the damaged passivation layer. Finally, a new UBM layer and new bumps are formed. By chemical etching, the failed bumps can be reworked and the yield of the bump production can be increased.
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