Semiconductor device for low voltage protection with low capacitance
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Sep 26, 2002
app pub date -
Oct 12, 2001
filing date -
Feb 15, 2000
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A semiconductor thyristor device (110) that incorporates buried regions (112) spaced around an emitter region (114). By spacing the buried regions (112) around the emitter region (114), current carriers emitted from the buried regions are distributed over a large area of the emitter region (114), thereby providing a high current capability during initial turn on of the device. In order to achieve low breakover voltage devices, the buried regions (112) are offset laterally with respect to the respective emitter regions (114). The low voltage thyristor device exhibits a low capacitance for operating with high speed, low voltage signals. The device capacitance is reduced by utilizing a plurality of buried regions (112), each formed having a relatively small area junction with the base region (118).
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully