Method of making a vertical, mirror quality surface in silicon and mirror made by the method
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United States of America Patent
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Issued Date -
Sep 26, 2002
app pub date -
Jan 26, 2001
filing date -
Jan 26, 2001
priority date (Note) -
Abandoned
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Abstract
A true vertical mirror is made in silicon along a vertical crystal plane of silicon. The method of making the mirror includes forming a mask on a (110) silicon surface so at least a portion of the mask is substantially aligned along an intersection between the (110) surface plane and a vertically extending (111) silicon plane. The mask is a layer of silicon oxide to facilitate a deep etching process. Vertical etching proceeds from the (110) surface substantially along the vertically extending (111) plane to form a first surface extending away from the (110) surface of the silicon. Lateral etching of the first surface creates a mirror-quality surface parallel to a vertically extending (111) crystalline plane. Advantageously, the lateral etching can be performed using an alkaline solution that tends not to etch the (111) face of silicon.
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