Semiconductor device with laterally varying p-top layers
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United States of America Patent
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app pub date -
Mar 16, 2001
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Mar 16, 2001
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Abstract
A high voltage MOS device (100) is disclosed. The MOS device comprises an n-well region (113) with a top layer (108) of opposite conductivity. The doping in the top layer (108) varies laterally, increasing breakdown voltage and decreasing on-resistance.
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