Bis (tertiarybutylamino) silane and ozone based doped and undoped oxides
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United States of America Patent
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Issued Date -
Sep 12, 2002
app pub date -
Jan 9, 2001
filing date -
Jan 9, 2001
priority date (Note) -
Abandoned
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Abstract
A CVD process for the deposition of silicon oxide by reacting BTBAS with an ozone reactant gas comprising providing a semiconductor wafer substrate in a single wafer reactor, contacting said substrate with a gaseous mixture containing a bis-tertiary butyl aminosilane reactant and an ozone reactant at a pressure ranging from about 10 Torr to about 760 Torr, and, heating said mixture at a temperature ranging from about 400 to about 600.degree. C., whereby said reactants are reacted to deposit said oxide as a film on said substrate.
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