TRANSPARENT AND CONDUCTIVE ZINC OXIDE FILM WITH LOW GROWTH TEMPERATURE
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United States of America Patent
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Issued Date -
Jul 4, 2002
app pub date -
Mar 30, 1999
filing date -
Mar 30, 1999
priority date (Note) -
Abandoned
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Abstract
The present invention relates to a novel zinc oxide thin film having hydrogen (H) and gallium (Ga) dopants. Advantageously, the activation temperature is low. The co-doped zinc oxide is highly conductive, transparent, chemically stable, easily deposited on a variety of substrates, including flexible or plastic substrates, and is well suited for electrical or optical applications. By co-doping with two impurities, both sides of the zinc oxide lattice contribute to the film conductivity resulting in high electron concentration and high mobility. The co-doped zinc oxide thin film has an increased Fermi level and a reduced work function that is less than 3 eV. The co-doped zinc oxide is crystal clear and transparent even when grown at relatively low processing temperatures. In another preferred embodiment of the present invention, a novel low-temperature activation indium tin oxide (ITO) thin film comprising tin oxide co-doped with indium (In) and hydrogen is disclosed.
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