Method for fabricating a semiconductor device
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United States of America Patent
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-
Jul 8, 2003
Grant Date -
Jun 27, 2002
app pub date -
Dec 17, 2001
filing date -
Dec 23, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for fabricating a semiconductor device includes sequentially forming a stopping layer, an intermetal dielectric, and a capping layer on an interlayer dielectric, selectively removing the capping layer, the intermetal dielectric, and the stopping layer to partially expose a surface of the interlayer dielectric to form a hole, selectively removing a side of the intermetal dielectric within the hole, depositing a metal film on an entire surface including the hole to form an air gap in a portion where the side of the intermetal dielectric is removed, and planarizing an entire surface of the metal film to expose a surface of the capping layer to form a plurality of metal lines.
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