Mixed acid solution in etching process, process for producing the same, etching process using the same and process for producing semiconductor device
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United States of America Patent
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Issued Date -
Jun 13, 2002
app pub date -
Jul 27, 2001
filing date -
Jul 31, 2000
priority date (Note) -
Abandoned
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Abstract
There is disclosed an etching solution containing at least hydrofluoric acid, nitric acid and hexafluorosilicic acid wherein the concentration of hexafluorosilicic acid is not less than 10% by weight based on the weight of the etching solution.
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