Mixed acid solution in etching process, process for producing the same, etching process using the same and process for producing semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20020072235A1
SERIAL NO

09916381

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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There is disclosed an etching solution containing at least hydrofluoric acid, nitric acid and hexafluorosilicic acid wherein the concentration of hexafluorosilicic acid is not less than 10% by weight based on the weight of the etching solution.

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Patent Owner(s)

Patent OwnerAddress
MITSUBISHI CHEMICAL CORPORATION1-1 MARUNOUCHI 1-CHOME CHIYODA-KU TOKYO 100-8251
NIPPON KASEI CHEMICAL COMPANY LIMITEDFUKUSHIMA-KEN

International Classification(s)

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  • 2001 Application Filing Year
  • H01L Class
  • 12651 Applications Filed
  • 6832 Patents Issued To-Date
  • 54.01 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2001200220032004200520062007200820092010201120122013201420150255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Haga, Sadao Kitakyushu-shi, JP 1 8
Itou, Katsuji Iwaki-shi, JP 4 30

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Patent Citation Ranking

  • 8 Citation Count
  • H01L Class
  • 1.35 % this patent is cited more than
  • 23 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges26732486276153735636241894301 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +050100150200250300350400450500550600650700750800

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