Three-dimensional lithography by multiple two-dimensional pattern projection
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United States of America Patent
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Issued Date -
May 23, 2002
app pub date -
Nov 19, 2001
filing date -
Nov 17, 2000
priority date (Note) -
Abandoned
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Abstract
Two programmable masks are used for the exposure of three-dimensional patterns in a photosensitive material. This exposure technique takes advantages of symmetries and repeating structures in the exposure pattern to reduce the exposure time, while maintaining the flexibility to produce complicated three-dimensional shapes.
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