Metal line of semiconductor device and method for fabricating the same
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United States of America Patent
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app pub date -
Jan 14, 2002
filing date -
Dec 26, 1997
priority date (Note) -
Abandoned
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Abstract
A metal line of a semiconductor device and method of fabricating the same are provided in which the metal line deterioration due to electromigration is minimized to improve its reliability. The method of fabricating the metal line includes forming a barrier layer on an interlevel insulating layer including a contact hole; forming a plug to fill the contact hole; sequentially forming a metal layer and first anti-reflective coating layer on the plug and barrier layer; coating a bilevel resist on the first anti-reflective coating layer; patterning the bilevel resist using a half tone mask to form grooves on the surface of the bilevel resist; etching the bilevel resist, first anti-reflective layer and metal layer to a predetermined depth until a portion of the first antireflective coating layer placed under the grooves of the bilevel resist is exposed; simultaneously etching the bilevel resist, first anti-reflective coating layer and metal layer to expose the interlevel insulating layer, thereby forming a metal line with uneven surface having grooves; and forming a second anti-reflective coating layer on both sides of the first antireflective coating layer, metal line and barrier layer.
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