Radio frequency ion plating apparatus
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United States of America Patent
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N/A
Issued Date -
Apr 25, 2002
app pub date -
Jun 13, 2001
filing date -
Jun 13, 2000
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A radio frequency ion plating apparatus in which an evaporation source 10 and rotational electrode 2 holding substrate are disposed in a vacuum chamber having suitable gas introduced therein, radio frequency power is supplied through a mechanical contactor 3, an ion in plasma generated in a radio frequency discharge space causes a film surface on a substrate to bombard by dc bias voltage generated at the rotational electrode holding substrate. Within the vacuum chamber is disposed auxiliary electrode 9 for producing plasma to which is supplied radio frequency power separately from radio frequency power supplied to rotational electrode 2 holding substrate. Two radio frequencies supplied to the rotational electrode holding substrate and the auxiliary electrode, respectively, are used with different frequency and or different power.
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