Method and apparatus for photothermal analysis of a layer of material, especially for thickness measurement thereof
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United States of America Patent
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Issued Date -
Mar 14, 2002
app pub date -
Mar 14, 2001
filing date -
Mar 17, 2000
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Abandoned
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Abstract
Method and apparatus for photothermal analysis of a layer of material, especially for thickness measurement thereof. The invention relates to a method of photothermal analysis of a layer of material, especially of measuring the thickness of a layer, wherein the surface of a first layer of material is excited by electromagnetic radiation and heat radiation emitted by said surface and having a first temperature response curve is detected, the surface of a second layer of material is excited and heat radiation emitted by said surface and having a second temperature response curve is detected, the first layer of material being a reference layer and the second layer of material being the layer of material to be analyzed. A stretch factor is determined between the first and second temperature response curves, and the stretch factor is used as a characteristic factor for the ratio between the layer of material to be analyzed and the reference layer. The invention likewise provides a corresponding apparatus for photothermal analysis and a computer program to carry out the method.
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