Semiconductor light emitting device
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United States of America Patent
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Issued Date -
Feb 7, 2002
app pub date -
Jun 27, 2001
filing date -
Jun 27, 2000
priority date (Note) -
Abandoned
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Abstract
In such a construction that an active layer (5) for emitting light when a current is injected thereto is sandwiched between an n-type clad layer (4) and a p-type clad layer (6) which are made of a material having a larger band gap than that of the active layer, the above-mentioned active layer (5) is made of a compound semiconductor containing Zn, o, and a group VI type element other than O. As a result, it is possible to obtain such a semiconductor light emitting device as a blue type LED or LD, which is made of the harmless material and does not include Cd specifically, while using a ZnO-based compound semiconductor of narrow band gap with fewer crystal defects and excellent in crystallinity as a material of its active layer sandwiched between clad layers, and also improving its light emitting properties.
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