Method of growing a thin film in gaseous phase and apparatus for growing a thin film in gaseous phase for use in said method
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United States of America Patent
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N/A
Issued Date -
Jan 24, 2002
app pub date -
May 15, 2001
filing date -
Jun 9, 2000
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
An improved method of growing a thin film in gaseous phase maintaining a uniform thickness and uniform electric properties such as resistivity, etc. over the whole surface of the film, and an apparatus for growing a thin film in gaseous phase adapted to conducting the above method. A method grows the thin film in gaseous phase by flowing down a film-forming reaction gas through plural gas feed ports 1, 2 formed in the top portion of a cylindrical reactor of an apparatus for glowing a thin film in gaseous phase via flow stabilizer plates 3, and bringing the film-forming reaction gas into contact with the wafer substrate A placed on a rotary susceptor 4 disposed on the lower side thereby to grow a thin film on the surface of the substrate, wherein space formed by the inner wall at the top portion of the reactor B and the flow stabilizer plates 3 is sectionalized into plural spatial sections in a concentric manner with the center of the wafer substrate A as nearly a center point, the gas feed ports 1, 2 are arranged to be corresponded to the sections, and at least either the flow rate or the concentration (8, 9) of the film-forming reaction gas fed to any one of the sections is adjusted.
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