Polysilicon resistor having adjustable temperature coefficients and the method of making the same
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United States of America Patent
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Issued Date -
Jan 24, 2002
app pub date -
Sep 26, 2001
filing date -
Apr 26, 2000
priority date (Note) -
Abandoned
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Abstract
A polysilicon resistor is formed using a late implant process. Low dopant concentrations on the order of 6.times.10.sup.19 to 3.75.times.10.sup.20 have shown good results. with a reduced post anneal temperature. Both the first and second order temperature coefficients (TC1 and TC2) can then be adjusted. Using electrical trimming resistors can be produced with highly linear temperature characteristics. By varying the geometries of the resistors, low trimming threshold current densities and voltages can be used to produce good results.
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