Soft recovery diode
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United States of America Patent
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N/A
Issued Date -
Jan 3, 2002
app pub date -
Jun 6, 2001
filing date -
Jun 30, 2000
priority date (Note) -
Abandoned
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Abstract
A soft recovery diode of the invention includes a first semiconductor layer having N type conductivity. A second N-type semiconductor layer is disposed on the first semiconductor layer and has a lower impurity concentration than the first semiconductor layer. In the surface of the second semiconductor layer opposite to the surface contacting the first semiconductor layer, a plurality of spaced-apart first metallic layers are formed. A second metallic layer is disposed on the first metallic layers and/or the exposed portions of the second semiconductor layer. The first and second metallic layers provide barriers of different heights.
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