Vacuum processing apparatus and multi-chamber vacuum processing apparatus
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United States of America Patent
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Issued Date -
Jan 3, 2002
app pub date -
May 17, 2001
filing date -
May 18, 2000
priority date (Note) -
Abandoned
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Abstract
A vacuum processing apparatus is capable of increasing the speed of exhaust of residual gas. With the reaction chamber formed in the vacuum vessel made smaller than the assistance chamber, the thin film is grown by introducing the raw material gas into the reaction chamber after moving the substrate stage toward the reaction chamber and decreasing the conductance of evacuation of the reaction chamber. When exhausting the residual gas by vacuum pumping, the substrate stage is moved into the assistance chamber thereby increasing the conductance of evacuation of the reaction chamber. Pressure in the reaction chamber is increased when growing the thin film and decreases when exhausting the residual gas by vacuum pumping.
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