Cleaning process for substrate surface
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United States of America Patent
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N/A
Issued Date -
Dec 20, 2001
app pub date -
May 2, 2001
filing date -
May 9, 2000
priority date (Note) -
Abandoned
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Abstract
Disclosed herein is a cleaning process for a substrate surface on which a high-density film and a low-density film lower in density than the high-density film are carried in combination. According to the cleaning process, a mixed gas of anhydrous hydrogen fluoride gas and a heated inert gas is brought into contact with the substrate surface such that at least a portion of the low-density film is removed without impairing the high-density film beyond a tolerance. The substrate is, for example, a semiconductor substrate.
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