Sputter deposition using multiple targets
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United States of America Patent
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app pub date -
Jun 13, 2001
filing date -
May 14, 1998
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Abandoned
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Abstract
In accordance with one specific embodiment of the present invention, an ion-beam deposition apparatus uses a plurality of stationary sputter targets so located so as to provide a predetermined thickness distribution of the target material on a substrate. This distribution is obtained without mechanical motion of ion sources, sputter targets, or a shaper located between the sputter targets and deposition substrate. In accordance with another embodiment, a sputter deposition apparatus uses a plurality of targets, with sputter deposition from different targets initiated and terminated in a controlled manner so as to deposit a layered structure. This layered structure is obtained without mechanical motion of ion sources, sputter targets, or a shaper located between the sputter targets and deposition substrate.
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