Acceleration sensor and process for the production thereof
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United States of America Patent
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Issued Date -
Oct 25, 2001
app pub date -
Jun 19, 2001
filing date -
Apr 27, 1992
priority date (Note) -
Abandoned
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Abstract
The purpose of the present invention is to provide an acceleration sensor having a novel structure, by which high precision and high reliability can be realized. A singlecrystal silicon substrate (1) is bonded through an SiO.sub.2 film (9) to a singlecrystal silicon substrate (8), and the singlecrystal silicon substrate (1) is made into a thin film. A cantilever (13) is formed on the singlecrystal silicon substrate (1), and the thickness of the cantilever (13) in a direction parallel to the surface of the singlecrystal silicon substrate (1) is made smaller, than the thickness of the cantilever in the direction of the depth of the singlecrystal silicon substrate (1), and movable in a direction parallel to the substrate surface. In addition, the surface of the cantilever (13) and the part of the singlecrystal silicon substrate (1), opposing the cantilever (13), are, respectively, coated with an SiO.sub.2 film (5), so that an electrode short circuit is prevented in a capacity-type sensor. In addition, a signal-processing circuit (10) is formed on the singlecrystal silicon substrate (1), so that signal processing is performed as the cantilever (13) moves.
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