Slurry for chemical mechanical polishing
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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N/A
Issued Date -
Jul 5, 2001
app pub date -
Dec 22, 2000
filing date -
Dec 28, 1999
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
The present invention relates to a slurry used for chemical mechanical polishing of a substrate having a copper-containing film at the surface, which slurry contains an abrasive, an oxidizing agent, and an adhesion-inhibitor preventing adhesion of a polishing product to a polishing pad. With the polishing slurry of the present invention, even when the copper-containing metal film to be polished has a large thickness or a large area and therefore the amount of the copper-containing metal to be polished is large, adhesion of polishing product to a polishing pad is suppressed and CMP can be completed satisfactorily in a single polishing operation without discontinuation.
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